Electronic and optical properties of HEMT heterostructures with δ-Si doped GaAs/AlGaAs quantum rings - quantum well system

被引：0

作者：

Sibirmovsky, Y. D. ^{[1
]}

Vasil'evskii, I. S. ^{[1
]}

Vinichenko, A. N. ^{[1
]}

Zhigunov, D. M. ^{[2
]}

Eremin, I. S. ^{[1
]}

Kolentsova, O. S. ^{[1
]}

Safonov, D. A. ^{[1
]}

Kargin, N. I. ^{[1
]}

机构：

[1] Natl Res Nucl Univ MEPhI, Moscow 115409, Russia

[2] Lomonosov Moscow State Univ, Moscow 119992, Russia

来源：

4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017) | 2017年 / 917卷

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1088/1742-6596/917/3/032041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Samples of delta-Si doped AlGaAs/GaAs/AlGaAs HEMT heterostructures with GaAs quantum rings (QRs) on top of the quantum well (QW) were grown by molecular beam epitaxy and their properties were compared to the reference samples without QRs. The thickness of the QW was 6 - 10 nm for the samples with QRs and 20 nm for the reference samples. Photoluminescence measurements at low temperatures for all samples show at least two distinct lines in addition to the bulk GaAs line. The Hall effect and low temperature magnetotransport measurements at 4 - 320 K show that conductivity with and without illumination decreases significantly with QRs introduction, however the relative photoconductivity increases. Samples with 6 nm QW are insulating, which could be caused by the strong localization of the charge carriers in the QRs.

引用

页数：5

共 10 条

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