The influence of Coulomb effects on the electron emission and capture in InGaAs/GaAs self-assembled quantum dots

被引：2

作者：

Sobolev, MM ^{[1
]}

Lantratov, VM ^{[1
]}

机构：

[1] RAS, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

PHYSICA B-CONDENSED MATTER | 2001年 / 308卷

基金：

俄罗斯基础研究基金会;

关键词：

GaAs; quantum dot; defects; heterostructures; interaction;

D O I：

10.1016/S0921-4526(01)00901-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The influence of built-in electrostatic potential of interface dipole on barrier energies for the emission and capture of electrons by InGaAs/GaAs quantum dots (QDs) has been found. It was shown that the formation of the interface dipole from carriers localized in QDs and ionized deep level defects depended on isochronous annealing under bias-on-bias-off cooling conditions. The dependence of the height of the capture barrier on the filling pulse duration, related to a manifestation of the Coulomb blockade effects on the capture of electrons into the ground and excited states of the dots, has also been revealed. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1113 / 1116

页数：4

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