Impact of Buffer Layer Process and Na on Shunt Paths of Monolithic Series-connected CIGSSe Thin Film Solar Cells

被引：15

作者：

Mo, Chan Bin ^{[1
,2
]}

Park, Se Jin ^{[1
]}

Bae, Soohyun ^{[1
]}

Lim, Mi-hwa ^{[3
]}

Nam, Junggyu ^{[3
]}

Kim, Dongseop ^{[3
]}

Yang, JungYup ^{[4
]}

Suh, Dongchul ^{[5
]}

Min, Byoung Koun ^{[6
]}

Kim, Donghwan ^{[1
]}

Kang, Yoonmook ^{[6
]}

Kim, Young-Su ^{[3
]}

Lee, Hae-seok ^{[6
]}

机构：

[1] Korea Univ, Dept Mat Sci & Engn, 145 Anam Ro, Seoul 136701, South Korea

[2] Korea Inst Ind Technol, Gangwon Reg Div, Gangneung Si 210340, Gangwon Do, South Korea

[3] Samsung SDI Co Ltd, Photovolta Dev Team, Cheonan Si 331300, South Korea

[4] Kunsan Natl Univ, Dept Phys, Gunsan 54150, South Korea

[5] Hoseo Univ, Dept Chem Engn, Asan, South Korea

[6] Korea Univ, Grad Sch Energy & Environm, KIST Green Sch, 145 Anam Ro, Seoul 136701, South Korea

来源：

SCIENTIFIC REPORTS | 2019年 / 9卷 / 1期

关键词：

ZN;

D O I：

10.1038/s41598-019-38945-5

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The illuminated current-voltage characteristics of Cu(In,Ga)(S,Se)(2) (CIGSSe) thin film solar cells fabricated using two different buffer layer processes: chemical bath deposition (CBD) and atomic layer deposition (ALD) were investigated. The CIGSSe solar cell with the ALD buffer showed comparable conversion efficiency to the CIGSSe solar cell with CBD buffer but lower shunt resistance even though it showed lower point shunt defect density as measured in electroluminescence. The shunt paths were investigated in detail by capturing the high-resolution dark lock-in thermography images, resolving the shunt resistance contributions of the scribing patterns (P1, P3), and depth profiling of the constituent elements. It was found that the concentration of Na from the soda-lime glass substrate played a key role in controlling the shunt paths. In the ALD process, Na segregated at the surface of CIGSSe and contributed to the increase in the shunt current through P1 and P3, resulting in a reduction in the fill factor of the CIGSSe solar cells.

引用

页数：11

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