Effect of Na-doped Concentration on the Structure and Optical Properties of ZnO Thin Films

被引:3
作者
Wang, Wei [1 ]
Meng, Wei [1 ]
Liu, Minghui [1 ]
Wang, Xinbo [1 ]
机构
[1] Shenyang Univ Technol, Coll Sci, Shenyang 100870, Peoples R China
来源
FRONTIERS OF ADVANCED MATERIALS AND ENGINEERING TECHNOLOGY, PTS 1-3 | 2012年 / 430-432卷
关键词
Sol-Gel; ZnO thin film; Na doping; Transparency; Optical band gap; PULSED-LASER DEPOSITION; FABRICATION; NANOWIRE; HYDROGEN; SENSOR; GAS;
D O I
10.4028/www.scientific.net/AMR.430-432.310
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Na-doped ZnO thin films were deposited on microscope glass substrates by sot-gel spin coating method, the Na/Zn ratio were 0at.%, 5at.%, 7.5at.%, 10at.%, 15at.%. The crystal structures, surface morphology, and optical properties were analyzed by X-ray diffraction, scanning electron microscopy, ultraviolet visible spectrophotometer, respectively. The results show that all the films are preferentially oriented along the c-axis perpendicular to the substrate surface. With the increase of the doping concentration, the roughness of the surfaces decrease and grain size grows from 17.1nm to 21.7nm, the sample with 10at.% Na exhibits best crystallinity and has lowest strain along the c-axis. The average optical transparency of the samples is higher than 70%, optical band gaps are between 3.213eV and 3.289eV.
引用
收藏
页码:310 / 314
页数:5
相关论文
共 20 条
[11]   Growth of p-type zinc oxide films by chemical vapor deposition [J].
Minegishi, K ;
Koiwai, Y ;
Kikuchi, Y ;
Yano, K ;
Kasuga, M ;
Shimizu, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (11A) :L1453-L1455
[12]   Effect of different dopant elements on the properties of ZnO thin films [J].
Nunes, P ;
Fortunato, E ;
Tonello, P ;
Fernandes, FB ;
Vilarinho, P ;
Martins, R .
VACUUM, 2002, 64 (3-4) :281-285
[13]   Dependence of the excitonic transition energies and mosaicity on residual strain in ZnO thin films [J].
Ong, HC ;
Zhu, AXE ;
Du, GT .
APPLIED PHYSICS LETTERS, 2002, 80 (06) :941-943
[14]  
Park CH, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.073202
[15]   Role of hydrogen in molecular beam epitaxy of ZnO [J].
Sano, M ;
Miyamoto, K ;
Kato, H ;
Yao, T .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (10) :5527-5531
[16]   Highly stable hydrogenated gallium-doped zinc oxide thin films grown by DC magnetron sputtering using H2/Ar gas [J].
Takeda, S ;
Fukawa, M .
THIN SOLID FILMS, 2004, 468 (1-2) :234-239
[17]   OPTICAL PROPERTIES AND ELECTRONIC STRUCTURE OF AMORPHOUS GERMANIUM [J].
TAUC, J ;
GRIGOROVICI, R ;
VANCU, A .
PHYSICA STATUS SOLIDI, 1966, 15 (02) :627-+
[18]  
Trolio A. D., 2009, J APPL PHYS, V105
[19]   Piezoelectric field effect transistor and nanoforce sensor based on a single ZnO nanowire [J].
Wang, Xudong ;
Zhou, Jun ;
Song, Jinhui ;
Liu, Jin ;
Xu, Ningsheng ;
Wang, Zhong L. .
NANO LETTERS, 2006, 6 (12) :2768-2772
[20]   Fabrication of p-type Li-doped ZnO films by pulsed laser deposition [J].
Xiao, Bin ;
Ye, Zhizhen ;
Zhang, Yinzhu ;
Zeng, Yujia ;
Zhu, Liping ;
Zhao, Binghui .
APPLIED SURFACE SCIENCE, 2006, 253 (02) :895-897