Ti-Si-N Films with a High Content of Si

被引：16

作者：

Musil, Jindrich ^{[1
]}

Zeman, Petr ^{[1
]}

Dohnal, Pavel ^{[1
]}

机构：

[1] Univ W Bohemia, Dept Phys, Plzen 30614, Czech Republic

来源：

PLASMA PROCESSES AND POLYMERS | 2007年 / 4卷

关键词：

DC discharges; films; oxidation; Si content; structure; Ti-Si-N film;

D O I：

10.1002/ppap.200731408

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The article reports on mechanical properties and oxidation of amorphous Ti-Si-N films with a high (>20 at.-%) content of Si reactively sputtered using a closed magnetic field dual magnetron sputtering system operating in AC pulse mode. The films were sputtered from compound targets on Si(100), 15 330 steel and Al(2)O(3) substrates. It was found that (1) the Ti-Si-N films with a high (>= 50 at.-%) content of N are X-ray amorphous and exhibit (i) relatively high hardness H ranging from similar to 20 to 27 GPa and (ii) high oxidation temperature achieving similar to 1480 degrees C for the a-Ti-Si-N film on the Al(2)O(3) (sapphire) substrate, and (2) Young's modulus of the films is strongly affected by mechanical properties of the substrate.

引用

页码：S574 / S578

页数：5

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