Enhancing mechanism for room temperature ferromagnetism in ZnO films on amine functionalization

被引：3

作者：

Jayalakshmi, G. ^{[1
]}

Balasubramanian, T. ^{[1
]}

机构：

[1] Natl Inst Technol, Dept Phys, Thin Film Lab, Tiruchirappalli 620015, Tamil Nadu, India

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2013年 / 24卷 / 08期

关键词：

ULTRAVIOLET EMISSION; ENHANCEMENT; NANORODS;

D O I：

10.1007/s10854-013-1193-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we have reported the enhancing mechanism for room temperature ferromagnetism (RTFM) in pure and V doped ZnO (Zn0.95V0.05O and Zn0.90V0.10O) films on trioctylamine (amine) functionalization. X-ray diffraction patterns of amine functionalized ZnO films show slight weak reflection as compared to the corresponding as-deposited ZnO films. The presence of N 1s peak at 398.5 eV implies the formation of Zn-N bond on ZnO film surface. The quenching of visible emission on amine functionalization indicates the passivation of oxygen vacancies via Zn-N bonding. Amine functionalized ZnO films exhibit robust RTFM and the origin is discussed based on the experimental results.

引用

页码：2928 / 2933

页数：6

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