A new resonant gate drive circuit with centre-tapped transformer

被引：0
|
作者：
Xu, K [1 ]
Liu, YF [1 ]
Sen, PC [1 ]
机构：
[1] Queens Univ, Dept Elect & Comp Engn, Kingston, ON K7L 3N6, Canada
来源：
IECON 2005: THIRTY-FIRST ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, VOLS 1-3 | 2005年
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper presents a new resonant gate drive circuit for a pair of low side switches with 50% duty cycle or less, which is suitable for variable frequency resonant converter, push-pull converter and so on. A centre-tapped transformer is utilized to boost switches' gate voltage twice high as Vcc voltage. Charging and discharging the gate input capacitance by a constant current source increases MOSFETs switching transition speed. The theoretical analysis and simulation waveforms are provided. A prototype board working at 1MHz is built and experimental results are also given.
引用
收藏
页码：639 / 644
页数：6
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