Direct and indirect exciton transitions in two-dimensional lead halide perovskite semiconductors

被引:13
|
作者
Do, T. Thu Ha [1 ]
del Aguila, Andres Granados [1 ]
Xing, Jun [2 ]
Liu, Sheng [1 ]
Xiong, Qihua [1 ,3 ,4 ]
机构
[1] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
[2] Qingdao Univ Sci & Technol, Minist Educ, Key Lab Ecochem Engn, Qingdao 266042, Peoples R China
[3] Natl Univ Singapore, Sorbonne Univ, Nanyang Technol Univ, Univ Cote dAzur,CNRS,MajuLab,Int Joint Res Unit U, Singapore, Singapore
[4] Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing, Peoples R China
来源
JOURNAL OF CHEMICAL PHYSICS | 2020年 / 153卷 / 06期
基金
新加坡国家研究基金会;
关键词
TEMPERATURE-DEPENDENCE; BINDING-ENERGY; PHOTOLUMINESCENCE; BIEXCITONS; LINEWIDTHS; SINGLE;
D O I
10.1063/5.0012307
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Atomically thin layers of two-dimensional lead halide perovskite semiconductors exhibit prominent light emission due to the inherently strong quantum and dielectric confinement. Electronic band structures and coupled electron-hole pairs (excitons), which govern the optical properties, are not well understood in these emergent two-dimensional materials. Here, we have performed both the steady-state and time-resolved photoluminescence spectroscopies with varying temperature to study the optical responses of a high-quality (PEA)(2)PbI4 single crystal. We observe a multitude of exciton transitions with different responses to temperature that suggests their different origins. Furthermore, our results suggest that the photoluminescence of layered perovskites is dominated by direct exciton transitions at low temperatures, while by an indirect exciton at high temperatures that can be explained by our proposed exciton band structure incorporating the interplay of Coulomb and Rashba effects. Our study sheds light on the intrinsic optical properties of two-dimensional perovskites that may be beneficial for the novel applications of perovskite-based devices.
引用
收藏
页数:9
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