Effect of diffusion from a lateral surface on the rate of GaN nanowire growth

被引：7
作者：
Sibirev, N. V. [1 ,2 ]
Tchernycheva, M. [1 ,3 ,4 ]
Cirlin, G. E. [1 ,2 ,5 ,6 ]
Patriarche, G. [4 ]
Harmand, J. C. [4 ]
Dubrovskii, V. G. [1 ,2 ,6 ]
机构：
[1] St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia
[2] St Petersburg State Univ, St Petersburg 199034, Russia
[3] Univ Paris 11, Inst Elect Fondamentale, F-91405 Orsay, France
[4] CNRS LPN, Marcoussis, France
[5] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 198103, Russia
[6] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2012年 / 46卷 / 06期
基金：
俄罗斯基础研究基金会;
关键词：
MOLECULAR-BEAM EPITAXY; NANOSTRUCTURES; WHISKERS; SI(111);
D O I：
10.1134/S1063782612060218
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The kinetics of the growth of GaN crystalline nanowires on a Si (111) surface with no catalyst is studied experimentally and theoretically. Noncatalytic GaN nanowires were grown by molecular-beam epitaxy with AlN inserts, which makes it possible to determine the rate of the vertical growth of nanowires. A model for the formation of GaN nanowires is developed, and an expression for their rate of growth is derived. It is shown that, in the general case, the dependence of the rate of growth on the nanowire diameter has a minimum. The diameter corresponding to the experimentally observed minimum of the rate of growth steadily increases with increasing diffusion flux from the lateral surface.
引用
收藏
页码：838 / 841
页数：4
相关论文
共 20 条
[1]   Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy [J].
Calarco, Raffaella ;
Meijers, Ralph J. ;
Debnath, Ratan K. ;
Stoica, Toma ;
Sutter, Eli ;
Luth, Hans. .
NANO LETTERS, 2007, 7 (08) :2248-2251
[2]   Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy [J].
Calleja, E ;
Sánchez-García, MA ;
Sánchez, FJ ;
Calle, F ;
Naranjo, FB ;
Muñoz, E ;
Jahn, U ;
Ploog, K .
PHYSICAL REVIEW B, 2000, 62 (24) :16826-16834
[3]   Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy [J].
Consonni, V. ;
Knelangen, M. ;
Trampert, A. ;
Geelhaar, L. ;
Riechert, H. .
APPLIED PHYSICS LETTERS, 2011, 98 (07)
[4]   Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius [J].
Consonni, V. ;
Knelangen, M. ;
Geelhaar, L. ;
Trampert, A. ;
Riechert, H. .
PHYSICAL REVIEW B, 2010, 81 (08)
[5]   Assessing the minimum diameter of nanowhiskers [J].
Dubrovskii, V. G. ;
Sibirev, N. V. .
TECHNICAL PHYSICS LETTERS, 2006, 32 (12) :1047-1050
[6]   Nonlinear effects during the growth of semiconductor nanowires [J].
Dubrovskii, V. G. ;
Sibirev, N. V. ;
Timofeeva, M. A. .
SEMICONDUCTORS, 2009, 43 (09) :1226-1234
[7]   Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires [J].
Dubrovskii, V. G. ;
Sibirev, N. V. ;
Cirlin, G. E. ;
Soshnikov, I. P. ;
Chen, W. H. ;
Larde, R. ;
Cadel, E. ;
Pareige, P. ;
Xu, T. ;
Grandidier, B. ;
Nys, J. -P. ;
Stievenard, D. ;
Moewe, M. ;
Chuang, L. C. ;
Chang-Hasnain, C. .
PHYSICAL REVIEW B, 2009, 79 (20)
[8]  
Dubrovskii V. G., 2009, SEMICONDUCTORS, V43
[9]   Kinetic model of the growth of nanodimensional whiskers by the vapor-liquid-crystal mechanism [J].
Dubrovskii, VG ;
Sibirev, NV ;
Cirlin, GE .
TECHNICAL PHYSICS LETTERS, 2004, 30 (08) :682-686
[10]   Gallium nitride nanowire nanodevices [J].
Huang, Y ;
Duan, XF ;
Cui, Y ;
Lieber, CM .
NANO LETTERS, 2002, 2 (02) :101-104
12