Electronic States of III-V and II-VI Alloys Calculated by IQB Theory

被引：0
|
作者：
Kishi, Ayaka [1 ]
Oda, Masato [1 ]
Shinozuka, Yuzo [1 ]
机构：
[1] Wakayama Univ, Grad Sch Syst Engn, Wakayama, Japan
来源：
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) | 2016年
关键词：
Compound Semiconductor; Alloy; Electronic Structure; Cation; Anion; Band Bowing; Mid Gap State; SEMICONDUCTORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electronic states of compound semiconductor (III-V and II-VI) alloys are calculated by the recently proposed interacting quasi-band (IQB) theory. Combining with the sp(3)(s*) empirical tight-binding model, quasi-Hamiltonian matrix facilitates the calculation of the conduction and valence bands of general alloys, A(1-x)B(x)D (AD(1-y)F(y)) for arbitrary concentration x (y) under a unified scheme. The concentration dependence of the electronic bands, including midgap states, is discussed in particular attention to constituent materials, lattice structure (zincblend or wurtzite), and substitution type (anion or cation).
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