Stress induced leakage current and bulk oxide trapping: Temperature evolution

被引：10

作者：

Ghidini, G ^{[1
]}

Sebastiani, A ^{[1
]}

Brazzelli, D ^{[1
]}

机构：

[1] Cent R&D, STMicroelectron, I-20041 Agrate Brianza, Italy

来源：

40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2002年

关键词：

D O I：

10.1109/RELPHY.2002.996673

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：415 / 416

页数：2

共 12 条

[1] ELECTRON-TRAP GENERATION BY RECOMBINATION OF ELECTRONS AND HOLES IN SIO2 [J].

CHEN, IC ;

HOLLAND, S ;

HU, C .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) :4544-4548

[2] DETERMINATION OF INSULATOR BULK TRAPPED CHARGE-DENSITIES AND CENTROIDS FROM PHOTOCURRENT-VOLTAGE CHARACTERISTICS OF MOS STRUCTURES [J].

DIMARIA, DJ .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :4073-4077

[3]

Fukuda H, 1996, ELEC SOC S, V96, P15

[4]

Ghidini G, 2000, ELEC SOC S, V2000, P353

[5]

GHIDINI G, P ESSDERC 2001, P247

[6]

KAMOHARA S, P IRPS 1998, P57

[7]

Manzini S., 1983, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 83, P112

[8]

MODELLI A, P IRPS 2001, P61

[9]

Naruke K, 1998, IEDM, P424

[10] NEUTRAL ELECTRON TRAP GENERATION IN SIO2 BY HOT HOLES [J].

OGAWA, S ;

SHIONO, N ;

SHIMAYA, M .

APPLIED PHYSICS LETTERS, 1990, 56 (14) :1329-1331

← 1 2 →