The degradation of quantum efficiency in negative electron affinity GaAs photocathodes under gas exposure

被引:85
作者
Chanlek, N. [1 ,2 ,3 ,4 ]
Herbert, J. D. [2 ,3 ]
Jones, R. M. [1 ,2 ]
Jones, L. B. [2 ,3 ]
Middleman, K. J. [2 ,3 ]
Militsyn, B. L. [2 ,3 ]
机构
[1] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England
[2] Sci Tech Daresbury, Cockcroft Inst, Warrington WA4 4AD, Cheshire, England
[3] Sci Tech Daresbury, STFC Daresbury Lab, Warrington WA4 4AD, Cheshire, England
[4] Synchrotron Light Res Inst, Nakhon Ratchasima 30000, Thailand
关键词
GALLIUM-ARSENIDE; ATOMIC-HYDROGEN; SURFACE; PHOTOEMISSION; GAAS(100); CO; ADSORPTION; H2O; O-2;
D O I
10.1088/0022-3727/47/5/055110
中图分类号
O59 [应用物理学];
学科分类号
摘要
The influence of O-2, CO2, CO, N-2, H-2 and CH4 on the stability of the quantum efficiency (QE) of a negative electron affinity gallium arsenide (GaAs) photocathode activated with caesium (Cs) and oxygen (O) has been demonstrated for the first time under an extremely high vacuum condition, a base pressure of 1.5 x 10(-11) mbar, where the influence of the background gas is minimized. It was found that exposure of a GaAs photocathode to N-2, H-2 and CH4 does not affect the QE, whereas exposure to O-2, CO2 and CO leads to a substantial reduction in photocathode QE. It was also found that the QE of photocathodes which have been degraded under O-2 exposure can be recovered to 95% of their initial QE level by the re-caesiation process, while those which have been degraded under exposure to CO and CO2 can only be partly restored to 60-70% of their initial QE levels.
引用
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页数:7
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