Structural, morphological, optical and gas sensing properties of pure and Ru doped SnO2 thin films by nebulizer spray pyrolysis technique

被引:56
作者
Sankar, C. [1 ]
Ponnuswamy, V. [1 ]
Manickam, M. [1 ]
Mariappan, R. [2 ]
Suresh, R. [1 ]
机构
[1] Sri Ramakrishna Miss Vidyalaya Coll Arts & Sci, Dept Phys, Coimbatore 641020, Tamil Nadu, India
[2] Adhiyaman Coll Engn & Technol, Dept Phys, Hosur 635109, India
关键词
Thin films; Nebulizer spray pyrolysis; Ruthenium; Gas sensing; HIGH-SENSITIVITY; SENSORS; CO; SURFACE; TEMPERATURE; DEPOSITION; ETHANOL; H2S; SELECTIVITY; MECHANISM;
D O I
10.1016/j.apsusc.2015.04.198
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Tin oxide thin films doped with different concentrations of ruthenium were deposited on the glass substrates at 450 degrees C by nebulizer spray pyrolysis technique. The structural, morphological, thickness and optical properties of thin films were investigated by X-ray diffraction, scanning electron microscopy, stylus profilometer and ultra violet spectrometer techniques. X-ray diffraction pattern confirms the tetragonal crystal structure for pure and ruthenium doped tin dioxide thin films. Ruthenium doped tin dioxide thin films are polycrystalline in nature. Scanning electron microscopy shows the modification of surface morphology of tin dioxide films due to varying concentration of ruthenium. Largest spheres, rings and interconnected fibers are present in the scanning electron microscopy images. Energy dispersive analysis reveals the average atomic percentage of pure and ruthenium doped tin dioxide present in the films developed. Stylus profilometer was used to measure the film thickness. Pure, 5, 10 and 15 wt% ruthenium doped tin dioxide thin films are found to have 327, 349, 386 and 425 nm thickness. Optical studies divulge that the band gap energy decreases from 3.55 eV to 3.04 eV due to the increased ruthenium concentrations. Gas sensing properties of pure and ruthenium doped tin dioxide thin films have been studied for various gases. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:931 / 939
页数:9
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