Influence of N incorporation on persistent photoconductivity in GaAsN alloys

被引：9

作者：

Field, R. L., III ^{[1
,2
]}

Jin, Y. ^{[1
,2
]}

Cheng, H. ^{[1
]}

Dannecker, T. ^{[1
,2
,3
]}

Jock, R. M. ^{[1
,2
]}

Wang, Y. Q. ^{[4
]}

Kurdak, C. ^{[1
]}

Goldman, R. S. ^{[1
,2
]}

机构：

[1] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA

[2] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

[3] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

[4] Los Alamos Natl Lab, Div Mat Sci & Technol, Los Alamos, NM 87545 USA

来源：

PHYSICAL REVIEW B | 2013年 / 87卷 / 15期

基金：

美国国家科学基金会; 爱尔兰科学基金会;

关键词：

GAINNAS/GAAS QUANTUM-WELLS; MOLECULAR-BEAM EPITAXY; DOT-LIKE BEHAVIOR; NITROGEN INCORPORATION; ELECTRONIC-PROPERTIES; DONOR; LUMINESCENCE; RELAXATION; ALXGA1-XAS; SILICON;

D O I：

10.1103/PhysRevB.87.155303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We examine the role of N environment on persistent photoconductivity (PPC) in GaAs1-xNx films. For x > 0.006, significant PPC is observed at cryogenic temperatures, with the PPC magnitude increasing with increasing x due to an increase in the density of N-induced levels. Interestingly, rapid thermal annealing suppresses the PPC magnitude and reduces the N interstitial fraction; thus, the N-induced level is likely associated with N interstitials. PPC is attributed to the photogeneration of carriers from N-induced levels to the conduction-band edge, leading to a modified N molecular bond configuration. With the addition of thermal energy, the ground state configuration is restored; the N-induced level is then able to accept carriers and the conductivity decays to its preillumination value. DOI: 10.1103/PhysRevB.87.155303

引用

页数：6

共 40 条

[1] Concentration of interstitial and substitutional nitrogen in GaNxAs1-x [J].

Ahlgren, T ;

Vainonen-Ahlgren, E ;

Likonen, J ;

Li, W ;

Pessa, M .

APPLIED PHYSICS LETTERS, 2002, 80 (13) :2314-2316

[2] Localization-delocalization transition of electrons at the percolation threshold of semiconductor GaAs1-xNx alloys: The appearance of a mobility edge [J].

Alberi, K. ;

Fluegel, B. ;

Beaton, D. A. ;

Ptak, A. J. ;

Mascarenhas, A. .

PHYSICAL REVIEW B, 2012, 86 (04)

[3] ENERGETICS OF DX-CENTER FORMATION IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW B, 1989, 39 (14) :10063-10074

[4] EFFECT OF TE AND S DONOR LEVELS ON PROPERTIES OF GAAS1-XPX NEAR DIRECT-INDIRECT TRANSITION [J].

CRAFORD, MG ;

STILLMAN, GE ;

ROSSI, JA ;

HOLONYAK, N .

PHYSICAL REVIEW, 1968, 168 (03) :867-&

[5] Alloy scattering of n-type carriers in GaNxAs1-x [J].

Fahy, S. ;

Lindsay, A. ;

Ouerdane, H. ;

O'Reilly, E. P. .

PHYSICAL REVIEW B, 2006, 74 (03)

[6] Temperature dependence of the GaAsN conduction band structure [J].

Grau, A. ;

Passow, T. ;

Hetterich, M. .

APPLIED PHYSICS LETTERS, 2006, 89 (20)

[7] ELECTRON TRAP BEHAVIOR IN TE-DOPED GAAS0.6P0.4 [J].

HENNING, ID ;

THOMAS, H .

SOLID-STATE ELECTRONICS, 1982, 25 (04) :325-333

[8] Effects of nitrogen incorporation on the electronic properties of GaxN1-xAs1-y epilayers probed by persistent photoconductivity [J].

Hsu, SH ;

Chen, WR ;

Su, YK ;

Chuang, RW ;

Chang, SJ ;

Chen, WC .

JOURNAL OF CRYSTAL GROWTH, 2006, 290 (01) :87-90

[9] Study of electronic properties by persistent photoconductivity measurement in GaxIn1-xNyAs1-y grown by MOCVD [J].

Hsu, SH ;

Su, YK ;

Chuang, RW ;

Chang, SJ ;

Chen, WC ;

Chen, WR .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4B) :2454-2457

[10] HIGH-TEMPERATURE TRANSPORT PROPERTIES OF N-TYPE GAAS [J].

IKOMA, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1970, 28 (06) :1474-&

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