Optimization of InSb Infrared Focal Plane Arrays

被引：0

作者：

Guo, Nan ^{[1
]}

Hu, Wei-Da ^{[1
]}

Chen, Xiao-Shuang ^{[1
]}

Lv, Yan-Qiu ^{[2
]}

Zhang, Xiao-Lei ^{[2
]}

Si, Jun-Jie ^{[2
]}

Lu, Wei ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, 500 Yu Tian Rd, Shanghai, Peoples R China

[2] Luoyang Optoelectron Inst, Luoyang 471009, Herts, Peoples R China

来源：

2012 12TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD) | 2012年

关键词：

PHOTODETECTORS; PHOTORESPONSE; PHOTODIODES; GAAS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The quantum efficiency (QE) for mid-wavelength InSb infrared focal plane arrays has been numerically studied. Effects of the absorption length and thickness of p-region on device QE have been investigated. Our work shows that the optimum thickness of p-region is largely dependent on the absorption characteristics of the InSb.

引用

页码：45 / +

页数：2

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