Electrical properties of pulsed laser deposited BaBiO3-δ thin films and their non-volatile resistive switching

被引：3

作者：

Bhatnagar, Divyanshu ^{[1
]}

Prabahar, K. ^{[2
]}

Suri, Manan ^{[3
]}

Srinivas, A. ^{[2
]}

Chatterjee, Ratnamala ^{[1
]}

机构：

[1] IIT Delhi, Phys Dept, Magnet & Adv Ceram Lab, New Delhi 110016, India

[2] Def Met Res Lab, Adv Magnet Grp, Hyderabad 500066, Telangana, India

[3] IIT Delhi, Dept Elect Engn, New Delhi 110016, India

来源：

MATERIALS RESEARCH EXPRESS | 2019年 / 6卷 / 04期

关键词：

SUPERCONDUCTIVITY;

D O I：

10.1088/2053-1591/aafdea

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films (50 nm, 100 nm and 300 nm) of multifunctional BaBiO3-delta (BBO) are grown in Au/BBO/Pt architecture using pulsed laser deposition (PLD) technique. Temperature dependent resistivity and dielectric measurements show a first order transformation with a thermal hysteresis of similar to 40 K (between similar to 150 K and similar to 190 K) in Au/BBO300/Pt device. Non-volatile resistive switching (RS) with a resistance window of similar to 8.5X is observed in Au/BBO300/Pt device at room temperature. The hysteretic J-V behavior exists in I2/m phase only. The application of a magnetic field (similar to 0.5 T) doubles the J-V hysteresis area. Thus, we demonstrate that the Au/BBO300/Pt is a non-volatile RS device and J-V hysteresis area of this device can be appreciably improved by applied magnetic field.

引用

页数：6

共 41 条

[1] RESEARCH ON THE BABIO3-DELTA SYSTEM (0-LESS-THAN-OR-EQUAL-TO-DELTA-LESS-THAN-OR-EQUAL-TO-0.5) [J].

ABBATTISTA, F ;

VALLINO, M ;

DELMASTRO, A ;

MAZZA, D ;

RONCHETTI, S .

JOURNAL OF SOLID STATE CHEMISTRY, 1995, 117 (01) :55-63

[2] Anomalous temperature behavior of BaBiO3 [J].

Adhikary, Ganesh ;

Singh, Navneet ;

Radhamany, Bindu .

MATERIALS RESEARCH EXPRESS, 2015, 2 (12)

[3] PREPARATION AND CHARACTERIZATION OF OXYGEN DEFICIENT PEROVSKITES, BABIO3-X [J].

BEYERLEIN, RA ;

JACOBSON, AJ ;

YACULLO, LN .

MATERIALS RESEARCH BULLETIN, 1985, 20 (08) :877-886

[4]

Bhatnagar D, 2016, Adv Mater Lett, V7, P604, DOI [10.5185/amlett.2016.6236, DOI 10.5185/AMLETT.2016.6236]

[5] Non-volatile resistive switching in oxide ion conductor BiYO3 thin films [J].

Bhatnagar, Divyanshu ;

Kumar, Ashwani ;

Prabahar, K. ;

Suri, Manan ;

Srinivas, A. ;

Chatterjee, Ratnamala .

APPLIED PHYSICS LETTERS, 2018, 113 (16)

[6] BaBiO3: A potential absorber for all-oxide photovoltaics [J].

Chouhan, Arun Singh ;

Athresh, Eashwer ;

Ranjan, Rajeev ;

Raghavan, Srinivasan ;

Avasthi, Sushobhan .

MATERIALS LETTERS, 2018, 210 :218-222

[7] MIXED-VALENT BA2BI3+BI5+O6 - STRUCTURE AND PROPERTIES VS TEMPERATURE [J].

COX, DE ;

SLEIGHT, AW .

ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1979, 35 (JAN) :1-10

[8] CRYSTAL-STRUCTURE OF BA2BI3+BI5+O6 [J].

COX, DE ;

SLEIGHT, AW .

SOLID STATE COMMUNICATIONS, 1976, 19 (10) :969-973

[9] Growth of (100)-highly textured BaBiO3 thin films on silicon [J].

Ferreyra, C. ;

Marchini, F. ;

Granell, P. ;

Golmar, F. ;

Albornoz, C. ;

Williams, F. J. ;

Leyva, A. G. ;

Rubi, D. .

THIN SOLID FILMS, 2016, 612 :369-372

[10] Tuning the electronic properties at the surface of BaBiO3 thin films [J].

Ferreyra, C. ;

Guller, F. ;

Marchini, F. ;

Luders, U. ;

Albornoz, C. ;

Leyva, A. G. ;

Williams, F. J. ;

Llois, A. M. ;

Vildosola, V. ;

Rubi, D. .

AIP ADVANCES, 2016, 6 (06)

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