Absorptive Fourier transient grating spectroscopy in indirect semiconductors and quantum structures

被引：1

作者：

Grivickas, V

机构：

[1] Vilnius State Univ, Inst Mat Res & Appl Sci, LT-2054 Vilnius, Lithuania

[2] Royal Inst Technol, Dept Elect, SE-16440 Stockholm, Sweden

来源：

ULTRAFAST PHENOMENA IN SEMICONDUCTORS | 1999年 / 297-2卷

关键词：

free carrier absorption; transient grating; recombination; diffusion; mobility; drag effect; Si; porous Si;

D O I：

10.4028/www.scientific.net/MSF.297-298.287

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Transient grating (TG) technique based on the photo-induced absorption of carriers is briefly reviewed. The focused infrared probe beam monitors the lateral TG erasure by scanning across the carrier profile which is excited by a pulsed laser. The spatial Fourier transform is calculated at each sampling time following the excitation pulse, This Fourier TG method allows sensitive measurements over a broad range of injection levels. Special attention is given to implement investigations of the ambipolar diffusivity, the minority carrier mobility, and important recombination mechanisms in indirect semiconductors and nanocrystallites.

引用

页码：287 / 290

页数：4

共 10 条

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