X-ray study of surfaces and interfaces

被引：9

作者：

Asadchikov, VE ^{[1
]}

Bukreeva, IN ^{[1
]}

Duparré, A ^{[1
]}

Kozhevnikov, IV ^{[1
]}

Krivonosov, YS ^{[1
]}

Morawe, C ^{[1
]}

Pyatakhin, MV ^{[1
]}

Steinert, J ^{[1
]}

Vinogradov, AV ^{[1
]}

Ziegler, E ^{[1
]}

机构：

[1] PN Lebedev Phys Inst, Moscow 119991, Russia

来源：

OPTICAL METROLOGY ROADMAP FOR THE SEMICONDUCTOR, OPTICAL, AND DATA STORAGE INDUSTRIES II | 2001年 / 4449卷

关键词：

roughness; x-ray scattering; x-ray reflectometry; atomic force microscopy;

D O I：

10.1117/12.450102

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The analysis of the roughness of B4C films of different thickness as well as W/B4C multilayer mirrors of different periods is performed basing on AFM and x-ray scattering (XRS) measurements. It is demonstrated that the linear model of a film growth is able to describe the whole set of experimental data including films at initial "island" stage of growth, if suppose the relaxation processes of a film surface to depend on the film thickness. New approach to the inverse problem of x-ray reflectometry consisting in inferring the dielectric constant profile from the reflectivity data is shortly discussed.

引用

页码：253 / 264

页数：4

共 21 条

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