Photoluminescence of ZnO nanowires dependent on O2 and Ar annealing

被引：61

作者：

Ha, Byeongchul ^{[1
]}

Ham, Heon ^{[2
]}

Lee, Cheol Jin ^{[3
]}

机构：

[1] Cheongiu Univ, Dept Nano Sci, Cheongju 360764, South Korea

[2] VIKO Syst Co Ltd, Gunpo 435764, Kyunggi Do, South Korea

[3] Korea Univ, Sch Elect Engn, Seoul 136713, South Korea

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2008年 / 69卷 / 10期

关键词：

Nanostructures; Optical materials; Defects; Luminescence; Optical properties;

D O I：

10.1016/j.jpcs.2008.04.041

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High-purity ZnO nanowires have been synthesized on Si substrates without the presence of a catalyst at 600 degrees C by a simple thermal vapor technique. Photoluminescence (PL) spectra of the annealed samples at 900 degrees C under oxygen and argon gases have been investigated. After 02 or At annealing, the PL visible-emission intensity that is related to intrinsic defects (oxygen vacancies) is greatly reduced compared with as-grown ZnO nanowires because the oxygen-gas ions or oxygen interstitials diffuse into the oxygen vacancies during annealing process. The blue-band peak of the O-2- or Ar-annealed ZnO naonowires is also smaller than the green-band peak in the visible broadband because of the reduction of oxygen vacancies. Therefore, the main intrinsic defects (oxygen vacancies) of as-grown ZnO nanowires can be reduced by O-2 or Ar annealing, which is an important procedure for the development of advanced optoelectronic ZnO nanowire devices. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：2453 / 2456

页数：4

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