Improvement of the sandwich junction properties by planarization of YBCO films

被引：7

作者：

Maruyama, M ^{[1
]}

Yoshida, K ^{[1
]}

Horibe, M ^{[1
]}

Fujimaki, A ^{[1
]}

Hayakawa, H ^{[1
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1999年 / 9卷 / 02期

关键词：

D O I：

10.1109/77.783773

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have improved the properties of c-axis-oriented YBCO/PBCO/YBCO trilayer junctions using planarization of YBCO films. The root-mean-square value of the film roughness reduces to less than 60% of that of an as-grown film. The junctions made through the planarization exhibit RSJ-like current-voltage characteristics even for 20-nm-thick PBCO interlayers. The characteristic voltage is 0.16 mV at 50 K which is remarkably improved compared to that of junctions without the planarization.

引用

页码：3456 / 3459

页数：4

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