IR laser-induced reactive ablation of silicon monoxide in hydrogen and water atmosphere

被引：18

作者：

Drinek, V

Bastl, Z

Subrt, J

Yabe, A

Pola, J ^{[1
]}

机构：

[1] Acad Sci Czech Republ, Inst Chem Proc Fundamentals, CR-16502 Prague, Czech Republic

[2] Acad Sci Czech Republ, J Heyrovsky Inst Phys Chem, CR-18223 Prague, Czech Republic

[3] Acad Sci Czech Republ, Inst Inorgan Chem, CZ-25068 Rez, Czech Republic

[4] Minist Int Trade & Ind, Agcy Ind Sci & Technol, Natl Inst Mat & Chem Res, Tsukuba, Ibaraki 305, Japan

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2002年 / 12卷 / 06期

关键词：

D O I：

10.1039/b200058j

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

TEA CO2 laser induced ablation of solid amorphous silicon monoxide in H-2 and H2O atmosphere results in deposition of hydrogenated SiOx films, which reveals that ablated silicon monoxide fragments are reactive towards H-2 and H2O. The films analyzed by FTIR and XP spectroscopy are revealed as rich in H, composed of Si-0 and several SixOyHz configurations and containing both Si-OH and Si-H bonds. The films produced in H2O have (Si) H mostly bonded in the (O-3)Si-H unit and those produced in H-2 have H attached to Si which is bonded to 1-3 oxygen atoms.

引用

页码：1800 / 1805

页数：6

共 75 条

[1] An X-ray photoelectron spectroscopic investigation into the chemical structure of deposits formed from hexamethyldisiloxane/oxygen plasmas [J].