Optimization of Al-doped ZnO films for low loss plasmonic materials at telecommunication wavelengths

被引：76

作者：

Kim, H. ^{[1
]}

Osofsky, M. ^{[1
]}

Prokes, S. M. ^{[1
]}

Glembocki, O. J. ^{[1
]}

Pique, A. ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 17期

关键词：

OXIDE THIN-FILMS; PULSED-LASER DEPOSITION; LIGHT-EMITTING DEVICES; ATOMIC-LAYER DEPOSITION; NEGATIVE REFRACTION; ALUMINUM; METAMATERIALS;

D O I：

10.1063/1.4802901

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al-doped ZnO (AZO) thin films were deposited on glass substrates by pulsed laser deposition for low loss plasmonic applications in the near IR (NIR). The effect of oxygen content on the electrical/optical properties of AZO films in this region was investigated. Films deposited at optimized conditions exhibit a carrier concentration of 1.2 x 10(21) cm(-3), carrier mobility of 18 cm(2) V-1 s(-1), and zero-cross-over of the real permittivity below 1.5 mu m. Optical losses in these AZO films are similar to 5 times smaller than conventional Ag films in the NIR. These results make AZO a promising low-loss alternative material to conventional metals for plasmonic devices operating at telecommunication wavelengths.

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