Low-temperature water gas shift reaction on Cu/SiO2 prepared by an atomic layer epitaxy technique

被引：31

作者：

Chen, Ching-Shiun ^{[1
]}

Lin, Jarrn-Horng ^{[2
]}

Lai, Tzn-Wen ^{[1
]}

机构：

[1] Chang Gung Univ, Ctr Gen Educ, Tao Yuan 333, Taiwan

[2] Natl Taiwan Univ, Dept Mat Sci, Taipei, Taiwan

来源：

CHEMICAL COMMUNICATIONS | 2008年 / 40期

关键词：

D O I：

10.1039/b807428c

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

An atomic layer epitaxy technique was used to produce nanoscale 2.9-3.4 nm copper particles supported on silica, and the nanoscale Cu/SiO(2) catalysts can show surprisingly high activity for the water gas shift reaction, in comparison with the 5.6 wt% Pt/SiO(2) and 10.3 wt% Cu/SiO(2) prepared by the impregnation method.

引用

页码：4983 / 4985

页数：3

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