A Dielectric-Modulated Tunnel-FET-Based Biosensor for Label-Free Detection: Analytical Modeling Study and Sensitivity Analysis

被引:210
作者
Narang, Rakhi [1 ]
Reddy, K. V. Sasidhar [2 ]
Saxena, Manoj [3 ]
Gupta, R. S. [4 ]
Gupta, Mridula [1 ]
机构
[1] Univ Delhi, Dept Elect Sci, New Delhi 110021, India
[2] Natl Inst Technol, Dept Elect & Elect Engn, Warangal 506004, Andhra Pradesh, India
[3] Univ Delhi, Dept Elect, Deen Dayal Upadhyaya Coll, New Delhi 110015, India
[4] Maharaja Agrasen Inst Technol, Dept Elect & Commun Engn, New Delhi 110086, India
关键词
Biosensor; dielectric-modulated field-effect transistor (FET) (DM-FET); label-free detection; nanogap; p-n-p-n; sensitivity; tunnel FET (TFET); FIELD-EFFECT TRANSISTOR; IMPROVEMENT;
D O I
10.1109/TED.2012.2208115
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, an analytical model for a p-n-p-n tunnel field-effect transistor (TFET) working as a biosensor for label-free biomolecule detection purposes is developed and verified with device simulation results. The model provides a generalized solution for the device electrostatics and electrical characteristics of the p-n-p-n-TFET-based sensor and also incorporates the two important properties possessed by a biomolecule, i.e., its dielectric constant and charge. Furthermore, the sensitivity of the TFET-based biosensor has been compared with that of a conventional FET-based counterpart in terms of threshold voltage (V-th) shift, variation in the ON-current (I-on) level, and I-on/ I-off ratio. It has been shown that the TFET-based sensor shows a large deviation in the current level, and thus, change in I-on can also be considered as a suitable sensing parameter. Moreover, the impacts of device parameters (channel thickness and cavity length), process variability, and process-induced damage on the sensitivity of the biosensor have also been discussed.
引用
收藏
页码:2809 / 2817
页数:9
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