Digitally Controlled Gate Current Source-Based Active Gate Driver for Silicon Carbide MOSFETs

被引：44

作者：

Sukhatme, Yash ^{[1
]}

Miryala, Vamshi Krishna ^{[1
]}

Ganesan, P. ^{[1
]}

Hatua, Kamalesh ^{[1
]}

机构：

[1] Indian Inst Technol Madras, Dept Elect Engn, Power Elect & Drives Grp, Chennai 600036, Tamil Nadu, India

来源：

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS | 2020年 / 67卷 / 12期

关键词：

MOSFET; Switches; Logic gates; Silicon carbide; Gate drivers; Threshold voltage; Mathematical model; Active gate driver; current source; EMI; silicon carbide (SiC) inverter; SiC MOSFET; silicon carbide MOSFET; DV/DT;

D O I：

10.1109/TIE.2019.2958301

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Silicon carbide (SiC) MOSFETs are viable alternatives for silicon (Si) insulated-gate bipolar transistors (IGBTs). However, direct retrofitting of SiC MOSFETs in Si IGBT-based converters is not feasible due to the presence of a higher amount of parasitic inductance. A large voltage and current overshoot along with oscillation are noticed in such attempts as SiC MOSFETs switch very fast. An active gate driver (AGD) can meet the conflicting requirements of faster switching speed and lower overshoot and ringing. A switched current source-based AGD is designed and extensively tested in a 50-kVA voltage source inverter made with SiC MOSFET power modules. The control methodology is discussed and the experimental results are presented in this article.

引用

页码：10121 / 10133

页数：13

共 50 条

[1] A Multi-Level Gate Driver for Crosstalk Suppression of Silicon Carbide MOSFETs in Bridge Arm
Zhu, Yaodong
Huang, Yongsheng
Wu, Haifu
Din, Zakiud
Zhang, Jianzhong
IEEE ACCESS, 2021, 9 : 100185 - 100196
[2] A Resonant Gate Driver for Silicon Carbide MOSFETs
Zhang, Jianzhong
Wu, Haifu
Zhao, Jin
Zhang, Yaqian
Zhu, Yaodong
IEEE ACCESS, 2018, 6 : 78394 - 78401
[3] A Novel Active Gate Driver for Silicon Carbide MOSFET
Paredes, Alejandro
Sala, Vicent
Ghorbani, Hamidreza
Romeral, Luis
PROCEEDINGS OF THE IECON 2016 - 42ND ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, 2016, : 3172 - 3177
[4] An Intelligent Versatile Model-Based Trajectory-Optimized Active Gate Driver for Silicon Carbide Devices
Zhao, Shuang
Zhao, Xingchen
Dearien, Audrey
Wu, Yuheng
Zhao, Yue
Mantooth, H. Alan
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2020, 8 (01) : 429 - 441
[5] Active Gate Driver IC Integrating Gate Voltage Sensing Technique for SiC MOSFETs
Wang, Ting-Wei
Chen, Ling-Chia
Takamiya, Makoto
Chen, Po-Hung
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2024, 39 (07) : 8562 - 8571
[6] An Active Gate Driver Control Scheme for Steady-State Current Balancing of Paralleled SiC MOSFETs
Lin, Nan
Al Hmoud, Ahmad Jaber Radi
Zhao, Yue
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2024, 71 (09) : 4341 - 4345
[7] Universal Active Gate Driver IC With Closed-Loop Timing Control and Gate-Sensing Technique for Silicon Carbide Power Devices
Kuo, Chia-Wei
Wang, Ting-Wei
Chen, Ling-Chia
Tu, Chang-Ching
Hsiao, Yi-Kai
Chen, Po-Hung
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2025, 40 (04) : 5120 - 5129
[8] A Cost-Efficient Active Gate Driver for Seamless Slew Rate Control of SiC MOSFETs
Ding, Yijun
Zhu, Chong
Gu, Jiawen
Zhang, Zhaolin
Lu, Yansong
Xu, Yang
Zhang, Xi
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2024, 39 (10) : 12558 - 12569
[9] Digital Close-Loop Active Gate Driver for Static and Dynamic Current Sharing of Paralleled SiC MOSFETs
Du, Liyang
Du, Xia
Zhao, Shuang
Wei, Yuqi
Yang, Zhiqing
Ding, Lijian
Mantooth, H. Alan
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2024, 12 (02) : 1372 - 1384
[10] The Active Gate Driver Based on Hardware Closed-Loop Control for Crosstalk Suppression of SiC MOSFETs With Kelvin-Source Connection
Cui, Mingkai
Chen, Lei
Pei, Yulong
Chai, Feng
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2025, 40 (01) : 217 - 226

← 1 2 3 4 5 →