Electrical characterization of the Au/InP(100) and Au/InSb/InP(100) structures

In this work, we measure the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics of the Au/InP(100) and Au/InSb/InP(100) Schottky type diodes. The InP(n) substrate is restructured by some monolayers of the InSb thin film, We then propose a study of the electrical quality of the elaborated components after the Au/InP interface creation; first without annealing and then after annealing by heating at 500 degrees C temperatures. Analysis of the measured I(V) characteristics for the Au/InP and Au/InSb/InP samples allows the determination of the electrical parameter variations. The saturation current I-s, the serial resistance R-s, the mean ideality factor n and also the barrier height phi(Bn), are respectively equal to 2.10 X 10(-4) A, 19 Ohm, 1.8 and 0.401 eV for the Au/InP sample and equal to 1.34 x 10(-7) A 175 Ohm, 1.78 and 6592 eV for the Au/heated InSb/InP, Another good result is that the analysis and simulation of the I(V) and the C(V) characteristics allows us to determine the very important mean interfacial state density N-ss(mean), and is obtained to be equal 4.23 X 10(12) eV(-1) cm(-2) for the Au/InP sample and equal to 4.42 X 10(12) eV(-1) cm(-2) for the Au/heated InSb/InP. This work thus permits the evolution study of these electrical parameters related to the restructuration conditions. (C) 1999 Elsevier Science Ltd. All rights reserved.