Modeling of Lanthanum Strontium Manganite Ferromagnetic Thin Film Material Tunable Resistance

被引：1

作者：

Ahmad, Mahmoud A. ^{[1
]}

Yun, Eui-Jung ^{[2
,3
]}

Plana, Robert ^{[1
]}

机构：

[1] Univ Toulouse, CNRS, LAAS, F-31077 Toulouse, France

[2] Hoseo Univ, Dept Semicond & Display Engn, Asan 336795, South Korea

[3] Hoseo Univ, Dept Syst & Control Engn, Asan 336795, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 12期

关键词：

Electroresistance (ER); ferromagnetic; lanthanum strontium manganite (LSMO); magnetoresistance (MR); material parameters; tunability; tunable circuit; tunable inductor; tunable resistor;

D O I：

10.1109/LED.2008.2006693

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The knowledge of the electroactive and magnetoactive properties of the lanthanum strontium manganite (LSMO) ferromagnetic thin film materials is essential for modeling and design of their devices. The activity of these materials can be described by their electro- and magnetoresistances. Under electrostatic bias field, it is assumed that induced electric current will modify the electrical behavior of the electrode-manganite interface, resulting in the decrease of film resistance. This letter takes a close look at modeling the change of LSMO resistance with working frequency and applied bias.

引用

页码：1296 / 1298

页数：3

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