Method for Extracting Doping Concentration and Flat-Band Voltage in Junctionless Multigate MOSFETs Using 2-D Electrostatic Effects

被引：18

作者：

Rudenko, Tamara ^{[1
]}

Yu, Ran ^{[2
]}

Barraud, Sylvain ^{[3
]}

Cherkaoui, Karim ^{[2
]}

Nazarov, Alexey ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Lashkaryov Inst Semicond Phys, UA-03028 Kiev, Ukraine

[2] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

[3] Commissariat Energie Atom & Energies Alternat, LETI, F-38054 Grenoble, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 08期

基金：

爱尔兰科学基金会;

关键词：

Doping concentration; flat-band voltage; junctionless (JL) multigate mosfets; silicon-on-insulator (SOI);

D O I：

10.1109/LED.2013.2268575

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we propose a new method to extract the doping concentration and flat-band voltage in junctionless (JL) multigate nanowire (NW) mosfets. The method is based on using the gate-to-channel capacitance measurements of devices with different relatively small NW widths, for which 2-D electrostatic effects are appreciable, and plotting the average carrier concentration as a function of the gate voltage. The proposed method is verified using numerical simulations and experimental data for trigate JL transistors.

引用

页码：957 / 959

页数：3

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