Interactions of 3D mask effects and NA in EUV lithography

被引：37

作者：

Neumann, Jens Timo ^{[1
]}

Graeupner, Paul ^{[1
]}

Kaiser, Winfried ^{[1
]}

Garreis, Reiner ^{[1
]}

Geh, Bernd ^{[2
]}

机构：

[1] Carl Zeiss SMT GmbH, Rudolf Eber Str 2, D-73447 Oberkochen, Germany

[2] Carl Zeiss S M T Inc, ASML TDC, Tempe, AZ USA

来源：

PHOTOMASK TECHNOLOGY 2012 | 2012年 / 8522卷

关键词：

High-NA EUV; chief-ray angle; shadowing; reticle coating; rigorous mask effects; demagnification;

D O I：

10.1117/12.2009117

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

With high NA (>0.33), and the associated higher angles of incidence on the reflective EUV mask, mask induced effects will significantly impact the overall scanner-performance. We discuss the expected effects in detail, in particular paying attention to the interaction between reflective coating and absorber on the mask, and show that there is a trade-off between image quality and mask efficiency. We show that by adjusting the demagnification of the lithography system one can recover both image quality and mask efficiency.

引用

页数：12