An analytical model to represent crystallization kinetics in materials with metastable phase formation

被引:16
作者
Claudio, D
Gonzalez-Hernandez, J
Licea, O
Laine, B
Prokhorov, E [1 ]
Trapaga, G
机构
[1] CINVESTAV, IPN, Queretaro 76230, Qro, Mexico
[2] CIMAV, Chihuahua 31109, Chih, Mexico
[3] Inst Natl Sci Appl, F-69621 Villeurbanne, France
关键词
amorphous semiconductors; crystal growth; nucleation; X-ray diffraction; chalcogenides;
D O I
10.1016/j.jnoncrysol.2005.11.007
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The aim of this article is to propose a simple analytical model that can describe the isothermal crystallization process in materials when the formation of a stable crystalline phase is preceded by the formation of a metastable phase. This model explains deviations from the well-known Johnson-Mehl-Avrami-Kolmogorov kinetics theory and predicts the three slopes in Avrami's plot. The model predictions were compared with experimental results obtained from X-ray measurements in the chalcogenide glasses with composition of Ge2Sb2Te5 (thin films) and in aqueous solutions of methylhydrazine monohydrate during isothermal phase transformations. In order to validate the proposed model to represent experimental results, a computer program was developed. This program uses experimental data from measurements of the total volume fraction at different times during isothermal transformations and fits the model parameters that best represent the kinetic behavior of the system. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:51 / 55
页数:5
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