High-impedance NbSi TES sensors for studying the cosmic microwave background radiation

被引:10
作者
Nones, C. [1 ]
Marnieros, S. [1 ]
Benoit, A. [2 ]
Berge, L. [1 ]
Bideaud, A. [2 ]
Camus, P. [2 ]
Dumoulin, L. [1 ]
Monfardini, A. [2 ]
Rigaut, O. [1 ]
机构
[1] CNRS IN2P3, CSNSM, F-91400 Orsay, France
[2] CNRS UJF, Inst Neel, F-38042 Grenoble, France
关键词
instrumentation: detectors; instrumentation: photometers; methods: laboratory; cosmic background radiation; TEMPERATURE; PHYSICS; ARRAYS;
D O I
10.1051/0004-6361/201218834
中图分类号
P1 [天文学];
学科分类号
0704 ;
摘要
Precise measurements of the cosmic microwave background (CMB) are crucial in cosmology because any proposed model of the universe must account for the features of this radiation. The CMB has a thermal blackbody spectrum at a temperature of 2.725 K, i.e. the spectrum peaks in the microwave range frequency of 160.2 GHz, corresponding to a 1.9-mm wavelength. Of all CMB measurements that the scientific community has not yet been able to perform, the CMB B-mode polarization is probably the most challenging from the instrumental point of view. The signature of primordial gravitational waves, which give rise to a B-type polarization, is one of the goals in cosmology today and amongst the first objectives in the field. For this purpose, high-performance low-temperature bolometric cameras, made of thousands of pixels, are currently being developed by many groups, which will improve the sensitivity to B-mode CMB polarization by one or two orders of magnitude compared to the Planck satellite HFI detectors. We present here a new bolometer structure that is able to increase the pixel sensitivities and to simplify the fabrication procedure. This innovative device replaces delicate membrane-based structures and eliminates the mediation of phonons: the incoming energy is directly captured and measured in the electron bath of an appropriate sensor and the thermal decoupling is achieved via the intrinsic electron-phonon decoupling of the sensor at very low temperature. Reported results come from a 204-pixel array of NbxSi1-x transition edge sensors with a meander structure fabricated on a 2-inch silicon wafer using electron-beam co-evaporation and a cleanroom lithography process. To validate the application of this device to CMB measurements, we have performed an optical calibration of our sample in the focal plane of a dilution cryostat test bench. We have demonstrated a light absorption close to 20% and an optical noise equivalent power of about 7 x 10(-16) W/root Hz, which is highly encouraging given the scope for improvement in this type of detectors.
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页数:6
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