Modelling of crosstalk in differential through silicon vias for three-dimensional integrated circuits

被引：1

作者：

Pan, Jin-Wei ^{[1
]}

Fu, Kai ^{[1
]}

Liu, Qi ^{[1
]}

Zhao, Wen-Sheng ^{[1
]}

Dong, Linxi ^{[1
]}

Wang, Gaofeng ^{[1
]}

机构：

[1] Hangzhou Dianzi Univ, Sch Elect & Informat, Minist Educ, Key Lab RF Circuits & Syst, Hangzhou 310018, Zhejiang, Peoples R China

来源：

IET MICROWAVES ANTENNAS & PROPAGATION | 2019年 / 13卷 / 10期

基金：

中国国家自然科学基金;

关键词：

crosstalk; three-dimensional integrated circuits; equivalent circuits; silicon; integrated circuit modelling; integrated circuit noise; interference suppression; crosstalk effects; D-TSVs; equivalent circuit model; circuit elements; noise coupling; silicon substrate; differential through silicon vias; three-dimensional full-wave field solver HFSS; 3D HFSS; floating silicon substrate; Si; THROUGH-SILICON;

D O I：

10.1049/iet-map.2018.5297

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The crosstalk effects of differential through silicon vias (D-TSVs) are studied. The equivalent circuit model is developed, with the circuit elements extracted analytically. Using the three-dimensional (3D) full-wave field solver HFSS, the circuit model is validated up to 100 GHz. By virtue of the circuit model, the noise couplings in the D-TSVs are evaluated. It is found that the noise coupling can be cancelled in the D-TSVs for a particular case. Finally, the influence of floating silicon substrate on the crosstalk in the D-TSVs is investigated.

引用

页码：1529 / 1535

页数：7

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