Influence of ZnS modification on the I-V performance of ZnO nanorods:P3HT composite films

被引：0

作者：

Wang Li-Shi ^{[1
,2
]}

Xu Jian-Ping ^{[2
]}

Shi Shao-Bo ^{[3
]}

Zhang Xiao-Song ^{[2
]}

Ren Zhi-Rui ^{[1
,2
]}

Ge Lin ^{[2
]}

Li Lan ^{[2
]}

机构：

[1] Tianjin Univ Technol, Coll Elect & Informat Engn, Tianjin 300384, Peoples R China

[2] Tianjin Univ Technol, Inst Mat Phys, Tianjin 300384, Peoples R China

[3] Tianjin Univ Technol & Educ, Coll Sci, Tianjin 300222, Peoples R China

来源：

ACTA PHYSICA SINICA | 2013年 / 62卷 / 19期

基金：

中国国家自然科学基金;

关键词：

ZnO NRAs; surface modification; I-V performance; PHOTOLUMINESCENCE; TRANSPORT; DEFECTS; P3HT;

D O I：

10.7498/aps.62.196103

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this paper, the ZnO nanorod arrays (NRAs) with a diameter of 50nm and a length of 250 nm were synthesized by chemical bath deposition method. Two devices with structures of ITO (indium tin oxides)/ZnO/poly-(3-hexylthiophene) (P3HT)/Au and ITO/ZnO@ZnS/P3HT/Au were fabricated and their performances were tested and evaluated separately. The I-V curves were measured for discussion of the threshold voltage, series resistance, reverse leakage current, and rectification ratio. Results show that the device with modified ZnO shows a decline in the threshold voltage, series resistance and reverse leakage current, but has an enhanced rectification ratio. The effect of ZnS coating on the improvement of conductive properties of the device could be attributed to the suppression of the non-radiative recombination of surface defects as shown by means of photoluminescence spectrum.

引用

页数：6

共 28 条

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