Quasi-localized Impurity State in Doped Topological Crystalline Insulator Sn0.9In0.1Te Probed by 125Te-NMR

被引：5
作者：
Maeda, Satoki [1 ]
Katsube, Shota [1 ]
Zheng, Guo-qing [1 ,2 ,3 ]
机构：
[1] Okayama Univ, Dept Phys, Okayama 7008530, Japan
[2] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[3] Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2017年 / 86卷 / 02期
关键词：
SNTE; SUPERCONDUCTIVITY; SILICON;
D O I：
10.7566/JPSJ.86.024702
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The In-doped topological crystalline insulator Sn1-xInxTe is a promising candidate for a topological superconductor, where it is theoretically suggested that In creates an impurity state responsible for superconductivity. We synthesized high purity Sn1-xInxTe samples and performed Te-125-nuclear magnetic resonance (NMR) measurements. The NMR spectra under a magnetic field of H-0 = 5T show a broadening characteristic due to a localized impurity state. The spin-lattice relaxation rate (1/T-1) divided by temperature shows a Curie-Weiss like temperature-dependence under H-0 = 0.1 T but is temperature-independent under H-0 = 5T. These results indicate the existence of quasi-localized impurity states due to In doping.
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页数：4
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