Carbon quantum dot modified Na3V2(PO4)2F3 as a high-performance cathode material for sodium-ion batteries

被引:88
作者
Liu, Shengyuan [1 ]
Cao, Xinxin [1 ]
Zhang, Yangpu [1 ]
Wang, Ke [1 ]
Su, Qiong [1 ]
Chen, Jing [1 ]
He, Qiong [1 ]
Liang, Shuquan [1 ]
Cao, Guozhong [3 ]
Pan, Anqiang [1 ,2 ]
机构
[1] Cent South Univ, Sch Mat Sci & Engn, Key Lab Elect Packaging & Adv Funct Mat Hunan Pro, Changsha 410083, Hunan, Peoples R China
[2] Nankai Univ, Minist Educ, Key Lab Adv Energy Mat Chem, Tianjin 300071, Peoples R China
[3] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA
基金
中国国家自然科学基金;
关键词
HOLLOW MICROSPHERES; RATE CAPABILITY; DOPED CARBON; GRAPHENE; LI; NANOFLAKES; ELECTRODES; ANODES;
D O I
10.1039/d0ta04307a
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Sodium-ion batteries (SIBs) are broadly regarded as a promising alternative to lithium-ion batteries (LIBs) for application in grid-scale energy storage because of abundant resources and the low cost of sodium. Nevertheless, there still exist some challenges, including low energy density, unsatisfactory cycling stability, and sluggish ion transfer. Herein, carbon quantum dot modified Na3V2(PO4)(2)F-3(NVPF@CQD) hierarchical microspheres were fabricatedviaa one-step solvothermal strategy followed by heat treatment. Furthermore, we systematically investigated how the solvothermal reaction time and content of carbon quantum dots influence the crystal structure, morphology and electrochemical performance, thereby obtaining the optimized final product. Impressively, the NVPF@CQD electrode presents awesome rate capability with a discharge capacity of 105.1 mA h g(-1)at 20C,i.e., 83% retention of its capacity at 0.2C. When cycled at a rate of 30C, the capacity retention is 90.2% after 6000 cycles, corresponding to a capacity fading of 0.0017% per cycle. Moreover, for practical applications, a sodium-ion full-cell configuration is constructed using the NVPF@CQD cathode and a commercial hard carbon anode exhibiting a high operating voltage and impressive cycling stability at 500 mA g(-1).
引用
收藏
页码:18872 / 18879
页数:8
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