Mounting of high power laser diodes on boron nitride heat sinks using an optimizedAu/Sn metallurgy

被引:68
作者
Pittroff, W [1 ]
Erbert, G [1 ]
Beister, G [1 ]
Bugge, F [1 ]
Klein, A [1 ]
Knauer, A [1 ]
Maege, J [1 ]
Ressel, P [1 ]
Sebastian, J [1 ]
Staske, R [1 ]
Traenkle, G [1 ]
机构
[1] Ferdinand Braun Inst, Hochstfrequenztechn, D-12489 Berlin, Germany
来源
IEEE TRANSACTIONS ON ADVANCED PACKAGING | 2001年 / 24卷 / 04期
关键词
gold/tin solder; heat dissipation; laser diodes; soldering; stress control;
D O I
10.1109/6040.982826
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High power diode lasers become more and more important to industrial and medical applications. In contrast to low power applications, long cavity lasers or laser bars are used in this field and mounting quality influences considerably laser performance and life time. In this paper we focus on the solder metallurgy and stress-induced laser behavior after mounting. The laser chips have been bonded fluxless epi-side down on translucent cubic boron nitride (T-cBN) using Au/Sn solder. The laser behavior has been tested with different chip metallizations preserving the eutectic solder composition or forming the An rich zeta-phase during reflow. The resulting additional stress in the lasing region has been independently indicated by polarization measurements of the emitted light. A metallization scheme has been developed which forms the highly melting zeta-phase during soldering within a wide process window. This procedure yields better results then using eutectic Au/Sn which has a higher hardness than the zeta-phase. Laser diodes up to a cavity length of 2000 mum and an aperture of 200 mum have successfully been mounted on T-cBN. State of the art laser data, excellent thermal stability, high Nield and reliability have been obtained.
引用
收藏
页码:434 / 441
页数:8
相关论文
共 12 条
[1]   IMAGING OF STRESSES IN GAAS DIODE-LASERS USING POLARIZATION-RESOLVED PHOTOLUMINESCENCE [J].
COLBOURNE, PD ;
CASSIDY, DT .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (01) :62-68
[2]   Al-free 950nm BA diode lasers with high efficiency and reliability at 50°C ambient temperature [J].
Erbert, G ;
Beister, G ;
Knauer, A ;
Maege, J ;
Pittroff, W ;
Ressel, P ;
Sebastian, J ;
Staske, R ;
Wenzel, H ;
Weyers, M ;
Tränkle, G .
LASER DIODES AND LEDS IN INDUSTRIAL, MEASUREMENT, IMAGING, AND SENSORS APPLICATIONS II; TESTING, PACKAGING AND RELIABILITY OF SEMICONDUCTOR LASERS V, 2000, 3945 :301-307
[3]  
ERBERT G, 2001, P SPIE, V4287
[4]  
Kallmayer C., 1995, Proceedings. 1995 International Flip Chip, Ball Grid Array, TAB and Advanced Packaging Symposium, ITAP '95, P225
[5]   A NEW BONDING TECHNOLOGY USING GOLD AND TIN MULTILAYER COMPOSITE STRUCTURES [J].
LEE, CC ;
WANG, CY ;
MATIJASEVIC, GS .
IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1991, 14 (02) :407-412
[6]  
MASSALSKI TB, 1992, BINARY ALLOY PHASE D, V3, P2863
[7]  
MATIJASEVIC G, 1989, J ELECTRON MATER, V18, P327, DOI 10.1007/BF02657425
[8]   VOID FREE BONDING OF LARGE SILICON DICE USING GOLD-TIN ALLOYS [J].
MATIJASEVIC, GS ;
WANG, CY ;
LEE, CC .
IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1990, 13 (04) :1128-1134
[9]  
PITTROFF W, 1998, P LEOS 98 ORL FL, P278
[10]   POLARIZATION OF THE SPONTANEOUS RADIATION OF STRESSED LASER HETEROSTRUCTURES [J].
PTASHCHENKO, AA ;
DEYCH, MV ;
MIRONCHENKO, NB ;
PTASHCHENKO, FA .
SOLID-STATE ELECTRONICS, 1994, 37 (4-6) :1255-1258