Alloy composition and temperature dependence of the direct energy gap in AlxGa1-xAs

被引：14

作者：

Larez, C ^{[1
]}

Rincon, C ^{[1
]}

机构：

[1] UNIV LOS ANDES,FAC CIENCIAS,DEPT FIS,CES,MERIDA 5251,VENEZUELA

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1997年 / 58卷 / 07期

关键词：

semiconductors; alloys; electronic structure; optical properties;

D O I：

10.1016/S0022-3697(96)00231-4

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

An empirical model is proposed to analyze the variation of the direct energy gap E-0 with temperature and alloy composition in the system AlxGa1-xAs. The E-0(T) curve for pure A;As was found to be slightly lower than that reported for a high impurity concentration sample. The adjustable parameters obtained for this compound can be related to its average optical phonon energy and lattice thermal dilation coefficient. For the alloys, one of these parameters can also be related to the broadening observed in the line shape of the direct E-0 exciton due to electron-phonon interaction. (C) 1997 Elsevier Science Ltd. All rights reserved.

引用

页码：1111 / 1114

页数：4

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