A Fully Integrated 150-GHz Transceiver Front-End in 65-nm CMOS

被引：25

作者：

Meng, Xiangyu ^{[1
]}

Chi, Baoyong ^{[1
]}

Liu, Yibo ^{[1
]}

Ma, Taikun ^{[1
]}

Wang, Zhihua ^{[1
]}

机构：

[1] Tsinghua Univ, Inst Microelect, Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples R China

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2019年 / 66卷 / 04期

基金：

中国国家自然科学基金;

关键词：

RF front-end; millimeter-wave; transceiver; CMOS; D-band; POWER; TRANSMITTER;

D O I：

10.1109/TCSII.2018.2870926

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully integrated D-band transceiver front-end with on-chip frequency synthesizer is implemented in 65-nm CMOS. The transceiver front-end adopts the dual-conversion sliding-IF heterodyne architecture to relax the design difficulty of the local oscillation (LO) signal generator. The D-band signal is first down-converted via a 100-GHz LO signal and IQ down-converted via a 50-GHz quadrature LO signal in the receiver (RX). While in the transmitter, the modulated signal is generated at 50 GHz and up-converted via a 100-GHz LO signal. The measured transmitter output power is 2.1 dBm at 150 GHz, with >11 GHz 3-dB bandwidth. The measured results also show the cascaded gain of the RX can be programmed from 57.4 dB to 45.6 dB with 3-dB bandwidth of 9.6 GHz to >20 GHz.

引用

页码：602 / 606

页数：5

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