High-Q 3 b/4 b RF MEMS Digitally Tunable Capacitors for 0.8-3 GHz Applications

被引：12

作者：

Patel, Chirag D. ^{[1
]}

Rebeiz, Gabriel M. ^{[1
]}

机构：

[1] Univ Calif San Diego, La Jolla, CA 92093 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2012年 / 22卷 / 08期

关键词：

Digital capacitor; RF MEMS; varactor;

D O I：

10.1109/LMWC.2012.2205301

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-Q digitally tunable capacitor is demonstrated with 3 and 4 b resolutions for 0.8-3 GHz applications. The device shows a tuning range of 1.0-3.75 pF in the 3 b configuration and 1.25-3.80 pF in the 4 b configuration (similar to 1-4 pF simulated). In addition to digital tuning, 30-530 fF of analog tuning is achieved and allows for precision tuning. The measured Q of the digitally tunable capacitor is >100 at 1 GHz and >60 at 2 GHz for all tuning states. A novel circular geometry maintains a high-Q as the capacitance is increased. The device is 2 x 1.8 mm which is ideal for tunable filters, matching networks and antennas.

引用

页码：394 / 396

页数：3

共 7 条

[1]

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