Electric field modulated electronic property in InAs/GaSb quantum well

被引：0
|
作者：
Wei, Xiangfei [1 ,2 ]
Ma, Yun [1 ,2 ]
Wu, Keyue [1 ,2 ]
Yang, Huan [2 ]
机构：
[1] West Anhui Univ, Sch Elect & Photoelect Engn, Luan 237012, Peoples R China
[2] West Anhui Univ, Reseach Ctr Atmos Mol & Opt Applicat, Luan 237012, Anhui, Peoples R China
来源：
2017 32ND YOUTH ACADEMIC ANNUAL CONFERENCE OF CHINESE ASSOCIATION OF AUTOMATION (YAC) | 2017年
关键词：
InAs/GaSb quantum well; External electric field; Form-factor; Exchange self-energy; ELECTROABSORPTION; HETEROSTRUCTURES; HYBRIDIZATION; TRANSITION;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
The electric field modulated electronic properties are investigated in InAs/GaSb based type II and broken-gap quantum wells. The transfer matrix method is employed to solve the Schrodinger equation in the present of the external electric field. The wavefunctions and subband energies for electron and hole can be tuned by the external electric field. The exchange self-energy induced by Coulomb interaction can be modulated by the gate electric voltage by tuning the Fermi energy and the form-factor which depends on the overlap of the wavefunctions. Our results provide a simple way to determine the electronic properties in InAs/GaSb based quantum well system.
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收藏
页码：587 / 590
页数：4
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