Electrical characterization of the polyaniline including boron/p-type silicon structure for optical sensor applications

被引：11
作者：
Yakuphanoglu, Fahrettin [1 ]
Senkal, B. Filiz [2 ]
机构：
[1] Firat Univ, Dept Phys, TR-23169 Elazig, Turkey
[2] Istanbul Tech Univ, Fac Arts & Sci, Dept Chem, TR-34469 Istanbul, Turkey
来源：
SYNTHETIC METALS | 2008年 / 158卷 / 21-24期
关键词：
Diode; Organic layer; Photovoltaic properties;
D O I：
10.1016/j.synthmet.2008.05.011
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The charge transport properties of polyaniline including boron (PANI-B)/p-type silicon diode have been investigated. The current-voltage characteristics of the device have been investigated under white and ultraviolet light illuminations. Electronic parameters such as the barrier height. diode ideality factor and series resistance, were determined from the current-voltage (I-V) characteristics in the dark of the device and were found to be 0.81 eV, 3.58 and 1.67 x 10(6) Omega. respectively. The photocurrent for the device was found to be 0.857 mu A. The open circuit voltage (V-proportional to = 119.6 mV) under UV illumination is higher than that of the open circuit voltage under (V-proportional to = 57.6 mV) white light illumination, although the intensity of the UV light has lower value. The obtained photovoltaic results suggest that the polyaniline including boron/p-type silicon device can be used as a sensor in optical applications. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：821 / 825
页数：5
相关论文
共 36 条
[1]   PAni-PMMA blend/metal Schottky barriers [J].
Angappane, S ;
Kini, NR ;
Natarajan, TS ;
Rangarajan, G ;
Wessling, B .
THIN SOLID FILMS, 2002, 417 (1-2) :202-205
[2]  
AVDIN ME, 2007, SYNTHETIC MET, V157, P1080
[3]  
AVDOGAN S, 2008, MICROELECTRON ENG, V85, P278
[4]   Electrical conduction processes in silicon nitride thin films prepared by r.f. magnetron sputtering using nitrogen gas [J].
Awan, SA ;
Gould, RD ;
Gravano, S .
THIN SOLID FILMS, 1999, 355 :456-460
[5]   Molecular control over Ag/p-Si diode by organic layer [J].
Aydin, M. E. ;
Yakuphanoglu, F. .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2007, 68 (09) :1770-1773
[6]   Electrical characterization of Al/MEH-PPV/p-Si Schottky diode by current-voltage and capacitance-voltage methods [J].
Aydin, Mehmet Enver ;
Yakuphanoglu, Fahrettin ;
Eom, Jae-Hoon ;
Hwang, Do-Hoon .
PHYSICA B-CONDENSED MATTER, 2007, 387 (1-2) :239-244
[7]   Current-voltage and capacitance-voltage characteristics of polypyrrole/p-InP structure [J].
Aydogan, S ;
Saglam, M ;
Türüt, A .
VACUUM, 2005, 77 (03) :269-274
[8]   The conductance and capacitance-frequency characteristics of Au/pyronine-B/ptype Si/Al contacts [J].
Cakar, M. ;
Yildirim, N. ;
Dogan, H. ;
Turut, A. .
APPLIED SURFACE SCIENCE, 2007, 253 (07) :3464-3468
[9]   The nonpolymeric organic compound (pyronine-B)/p-type silicon/Sn contact barrier devices [J].
Çakar, M ;
Onganer, Y ;
Türüt, A .
SYNTHETIC METALS, 2002, 126 (2-3) :213-218
[10]   Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers [J].
Campbell, IH ;
Rubin, S ;
Zawodzinski, TA ;
Kress, JD ;
Martin, RL ;
Smith, DL ;
Barashkov, NN ;
Ferraris, JP .
PHYSICAL REVIEW B, 1996, 54 (20) :14321-14324
1234