Optimization on the luminous efficiency in AlGaN-based ultraviolet light-emitting diodes by amendment of a superlattice hole reservoir layer

被引：11

作者：

Yang, Xian ^{[1
]}

Sun, Huiqing ^{[1
]}

Fan, Xuancong ^{[1
]}

Zhang, Zhuding ^{[1
]}

Sun, Jie ^{[1
]}

Yi, Xinyan ^{[1
]}

Guo, Zhiyou ^{[1
]}

机构：

[1] South China Normal Univ, Inst Optoelect Mat & Technol, Lab Nanophoton Funct Mat & Devices, Guangzhou 510631, Guangdong, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2017年 / 101卷

关键词：

UVLED; AlGaN; Hole reservoir layer; APSYS;

D O I：

10.1016/j.spmi.2016.09.048

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The application of a p-type superlattice hole reservoir layer in the traditional ultraviolet light-emitting diodes (UVLED) can obtain better Internal quantum efficiency (IQE) and output power, ease the problem about efficient carrier movement in high Al-content AlGaN material. Through computation and analysis by using the APSYS simulation software, the change of position of the hole reservoir layer can influence the luminous efficiency. The design of a superlattice hole reservoir layer between electron blocking layer (EBL) and p-type AlGaN layer can obviously reduce the hole potential height and increase the electron potential height, produce more hole injection and less electron leak, leading to higher carrier concentration, so as to realize the further increased for carrier recombination rate. (C) 2016 Published by Elsevier Ltd.

引用

页码：293 / 298

页数：6

共 50 条

[1] Improvement of AlGaN-based deep ultraviolet light-emitting diodes by using a graded AlGaN superlattice hole reservoir layer [J].

Wang, Xin ;

Sun, Hui-Qing ;

Guo, Zhi-You .

OPTICAL MATERIALS, 2018, 86 :133-137

[2] High efficiency improvements in AlGaN-based ultraviolet light-emitting diodes with specially designed AlGaN superlattice hole and electron blocking layers [J].

Yi, Xinyan ;

Sun, Huiqing ;

Sun, Jie ;

Yang, Xian ;

Fan, Xuancong ;

Zhang, Zhuding ;

Guo, Zhiyou .

SUPERLATTICES AND MICROSTRUCTURES, 2017, 104 :19-23

[3] Hole Injection Efficiency Improvement for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes [J].

Tian Kangkai ;

Chu Chunshuang ;

Bi Wengang ;

Zhang Yonghui ;

Zhang Zihui .

LASER & OPTOELECTRONICS PROGRESS, 2019, 56 (06)

[4] Advantages of AlGaN-based deep ultraviolet light-emitting diodes with a superlattice electron blocking layer [J].

Sun, Pai ;

Bao, Xianglong ;

Liu, Songqing ;

Ye, Chunya ;

Yuan, Zhaorong ;

Wu, Yukun ;

Li, Shuping ;

Kang, Junyong .

SUPERLATTICES AND MICROSTRUCTURES, 2015, 85 :59-66

[5] Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer [J].

Hu, Jiahui ;

Zhang, Jun ;

Zhang, Yi ;

Zhang, Huixue ;

Long, Hanling ;

Chen, Qian ;

Shan, Maocheng ;

Du, Shida ;

Dai, Jiangnan ;

Chen, Changqing .

NANOSCALE RESEARCH LETTERS, 2019, 14 (01)

[6] Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer [J].

Jiahui Hu ;

Jun Zhang ;

Yi Zhang ;

Huixue Zhang ;

Hanling Long ;

Qian Chen ;

Maocheng Shan ;

Shida Du ;

Jiangnan Dai ;

Changqing Chen .

Nanoscale Research Letters, 2019, 14

[7] Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes [J].

Chen, Yuxuan ;

Ben, Jianwei ;

Xu, Fujun ;

Li, Jinchai ;

Chen, Yang ;

Sun, Xiaojuan ;

Li, Dabing .

FUNDAMENTAL RESEARCH, 2021, 1 (06) :717-734

[8] AlGaN-based ultraviolet light-emitting diodes: challenges and opportunities [J].

Usman, Muhammad ;

Malik, Shahzeb ;

Munsif, Munaza .

LUMINESCENCE, 2021, 36 (02) :294-305

[9] [INVITED] Special AlGaN graded superlattice hole and electron blocking layers improved performance of AlGaN-based ultraviolet light-emitting diodes [J].

Yi, Xinyan ;

Sun, Huiqing ;

Li, Zhifu ;

Sun, Jie ;

Liu, Tianyi ;

Wang, Xin ;

Zhang, Xiu ;

Guo, Zhiyou .

OPTICS AND LASER TECHNOLOGY, 2018, 106 :469-473

[10] Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes [J].

Lee, K. B. ;

Parbrook, P. J. ;

Wang, T. ;

Bai, J. ;

Ranalli, F. ;

Airey, R. J. ;

Hill, G. .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (10) :2857-2859

← 1 2 3 4 5 →