Electrical and Optical Properties of Ga-Doped ZnO Films Grown on Glass and Plastic Substrates by Using Plasma-Assisted Deposition

被引：6

作者：

Muranaka, T. ^{[1
]}

Nisii, A. ^{[1
]}

Uehara, T. ^{[1
]}

Sakano, T. ^{[1
]}

Nabetani, Y. ^{[1
]}

Akitsu, T. ^{[1
]}

Kato, T. ^{[1
]}

Matsumoto, T. ^{[1
]}

Hagihara, S. ^{[2
]}

Abe, O. ^{[2
]}

Hiraki, S. ^{[3
]}

Fujikawa, Y. ^{[3
]}

机构：

[1] Univ Yamanashi, Dept Elect Engn, Yamanashi 4008511, Japan

[2] Yamanashi Ind Technol Ctr, Kofu, Yamanashi 4000055, Japan

[3] Nakaya Corp, Yamanashi 4093853, Japan

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2008年 / 53卷 / 05期

关键词：

Ga-doped ZnO (GZO); Molecular beam epitaxy (MBE); Low-temperature growth; Hall measurement; Optical transmittance;

D O I：

10.3938/jkps.53.2947

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ga-doped zinc-oxide (GZO) films grown under various Ga/Zn supply ratios were carefully characterized by using Hall measurements and optical transmittance measurements to investigate the electrical and the optical properties of the GZO films on glass, polyethylene terephthalate (PET), and polycarbonate (PC) substrates. The resistivity of the GZO films grown at 290 C on glass substrates ranged from 4 x 10(-2) ohm cm to 3 x 10(-4) ohm cm for Ga/Zn supply ratios from 0 % to 0.5 %. The growth of the GZO films at a low temperature of 90 degrees C was also performed on glass, PET, and PC substrates. When the Ga/Zn supply ratios were 0.05 - 0.1 %, the 90 degrees C-grown GZO films on glass substrates showed resistivities similar to those of 290 degrees C-grown GZO films. The 90 degrees C-grown GZO films on PET and PC substrates showed resistivities of 1 x 10(-3) ohm cm and 4 x 10(-4) ohm cm, respectively. The Hall carrier density was 8 x 10(20) cm(-3), which was almost the same value as that of the 90 degrees C-grown GZO films on glass substrates. The GZO films on PET and PC substrates also showed visible transparency as good as that of the GZO films on glass substrates, and the average transmittance in the visible region was higher than 85 %.

引用

页码：2947 / 2950

页数：4

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