Compositional Stresses in Polycrystalline Titania Films

被引:21
作者
Bhatia, Sidharth [1 ]
Sheldon, Brian W. [1 ]
机构
[1] Brown Univ, Div Engn, Providence, RI 02912 USA
基金
美国国家科学基金会;
关键词
D O I
10.1111/j.1551-2916.2008.02710.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Certain transition metal oxides exhibit relatively large compositional changes in response to variations in the oxygen partial pressure. In thin film form, these composition changes can lead to stress because of the constraint imposed by the underlying substrate. To investigate these effects, polycrystalline titania (anatase phase) was grown by metal-organic chemical vapor deposition. The stress changes during oxidation and reduction of these films were then studied by monitoring substrate curvature at elevated temperatures in controlled atmospheres. Variations in the temperature and grain size of the films were investigated. These results were analyzed in terms of point defects. In particular, the total stress change observed during oxidation-reduction cycles increased with decreasing grain size. This suggests that grain boundaries are associated with significantly higher defect concentrations in these materials, and that compositional stress data can provide important information about the nature of these defects.
引用
收藏
页码:3986 / 3993
页数:8
相关论文
共 34 条
  • [1] Adler SB, 2001, J AM CERAM SOC, V84, P2117, DOI 10.1111/j.1151-2916.2001.tb00968.x
  • [2] Point defects and transport in binary and ternary, non-stoichiometric oxides
    Aggarwal, S
    Topfer, J
    Tsai, TL
    Dieckmann, R
    [J]. SOLID STATE IONICS, 1997, 101 : 321 - 331
  • [3] ANN J, 1993, J AM CERAM SOC, V76, P2437
  • [4] ANN J, 1993, J AM CERAM SOC, V76, P2447
  • [7] Defect chemistry and semiconducting properties of titanium dioxide: I. Intrinsic electronic equilibrium
    Bak, T
    Nowotny, J
    Rekas, M
    Sorrell, CC
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2003, 64 (07) : 1043 - 1056
  • [8] BHATIA S, 2006, THESIS BROWN U
  • [9] Titanium dioxide (TiO2)-based gate insulators
    Campbell, SA
    Kim, HS
    Gilmer, DC
    He, B
    Ma, T
    Gladfelter, WL
    [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1999, 43 (03) : 383 - 392
  • [10] Monitoring stress in thin films during processing
    Chason, E
    Sheldon, BW
    [J]. SURFACE ENGINEERING, 2003, 19 (05) : 387 - 391