An Al0.3Ga0.7N/GaN undoped channel heterostructure field effect transistor with Fmax of 107 GHz

被引：60

作者：

Li, R ^{[1
]}

Cai, SJ

Wong, L

Chen, Y

Wang, KL

Smith, RP

Martin, SC

Boutros, KS

Redwing, JM

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

[2] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

[3] Epitron ATMI, Danbury, CT 06810 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 07期

关键词：

GaN; microwave; transistor;

D O I：

10.1109/55.772364

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An Al0.3Ga0.7N/GaN heterostructure field effect transistor (HFET) grown on semi-insulating SiC with an 0.2-mu m gate length is reported. A source-drain ohmic contact resistance of 0.15-Ohm-mm was achieved through the use of high Al content and high n-type doping (1E19 cm(-3)) in the AlGaN donor layer and optimized metallization procedures. We obtained a maximum transconductance of 260 mS/mm, a saturated current density of 1.2 A/mm, and a maximum oscillation frequency in excess of 107 GHz in the devices, The results are one of the best achieved up to now, and they will open up the potential for the applications of AlGaN/GaN HFET's in high-power microwave radar, remote sensing, and communications.

引用

页码：323 / 325

页数：3

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