Distinguished student paper:: Noble a-Si:H gate driver with high stability

被引：18

作者：

Choi, Jae Won ^{[1
]}

Kwon, Min Sung ^{[1
]}

Koo, Ja Hun ^{[1
]}

Park, Jong Hyuk ^{[1
]}

Kim, Se Hwan ^{[1
]}

Oh, Dong Hae ^{[1
]}

Lee, Seung-Woo ^{[1
]}

Jang, Jin ^{[1
]}

机构：

[1] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea

来源：

2008 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXIX, BOOKS I-III | 2008年 / 39卷

关键词：

D O I：

10.1889/1.3069358

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We developed a stable, hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver, composed of 10 TFTs and 1 capacitor. The pull-down transistors are operated under A C bias to reduce the threshold voltage shaft (V-th shift). In our previous simulation results indicate that its lifetime can be as long as 50,000 hrs by AC operation of pull-down transistors. In this work we have studied the reliability of the gate driver manufactured We confirmed that our gate driver is very stable, so that the expected lifetime is longer than 50000 hrs.

引用

页码：1227 / 1230

页数：4

共 9 条

[1] Level shifter embedded in drive circuits with amorphous silicon TFTs
Bae, BS
Choi, JW
Oh, JH
Jang, J
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (03) : 494 - 498
[2] Stability of an amorphous silicon oscillator
Bae, BS
Choi, JW
Kim, SH
Oh, JH
Jang, J
[J]. ETRI JOURNAL, 2006, 28 (01) : 45 - 50
[3] Choi JW, 2006, J KOREAN PHYS SOC, V48, pS98
[4] Chun M, 2005, IDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2, P1077
[5] KIM B, 2005, ASI GATE DRIVER INTE, P1073
[6] Koo JH, 2007, J KOREAN PHYS SOC, V50, pL933, DOI 10.3938/jkps.50.933
[7] TIME AND TEMPERATURE-DEPENDENCE OF INSTABILITY MECHANISMS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS
POWELL, MJ
VANBERKEL, C
HUGHES, JR
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (14) : 1323 - 1325
[8] DEFECT POOL IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS
POWELL, MJ
VANBERKEL, C
FRANKLIN, AR
DEANE, SC
MILNE, WI
[J]. PHYSICAL REVIEW B, 1992, 45 (08): : 4160 - 4170
[9] CHARGE TRAPPING INSTABILITIES IN AMORPHOUS SILICON-SILICON NITRIDE THIN-FILM TRANSISTORS
POWELL, MJ
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 597 - 599

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