Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials

被引：2

作者：

Hiblot, G. ^{[1
,2
]}

Rafhay, Q. ^{[2
]}

Boeuf, F. ^{[1
]}

Ghibaudo, G. ^{[2
]}

机构：

[1] STMicroelectronics, F-38926 Crolles, France

[2] Minatec INPG, IMEP LAHC, F-38016 Grenoble, France

来源：

SOLID-STATE ELECTRONICS | 2015年 / 111卷

关键词：

Nanowire; Double gate; Compact modeling; Subthreshold swing; Density-Gradient; III-V; THRESHOLD VOLTAGE MODEL; PUNCHTHROUGH; INVERSION;

D O I：

10.1016/j.sse.2015.06.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, an analytical model for the subthreshold swing of double gate and cylindrical nanowire MOSFETs is proposed. Using the Voltage Doping Transform, it is shown that a one-dimensional potential model is sufficient to obtain a high accuracy, provided that an effective oxide thickness is used. The validity of this model is then confirmed with TCAD simulations. Finally, the impact of quantum effects is discussed. Based on Density-Gradient simulations of Si and GaAs MOSFETs, it is shown that the model is still valid when quantum effects are accounted for. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：188 / 195

页数：8

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