Photovoltaic and electronic properties of quercetin/p-InP solar cells

被引：69
作者：
Guellue, Oe. [1 ]
Tueruet, A. [1 ]
机构：
[1] Ataturk Univ, Dept Phys, TR-25240 Erzurum, Turkey
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2008年 / 92卷 / 10期
关键词：
organic solar cell; organic-inorganic Schottky contact; quercetin;
D O I：
10.1016/j.solmat.2008.04.009
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this work, quercetin/p-InP heterojunction solar cell has been fabricated via solution-processing method and characterized by current-voltage and capacitance-voltage measurements at room temperature. A barrier height and an ideality factor value of 0.86eV and 3.20 for this structure in dark have been obtained from the forward bias current-voltage characteristics. From the capacitance-voltage measurement, the barrier height and free carrier concentration values for the quercetin/pInP device have been calculated as 1.63 eV and 3.8 x 10(17) cm(-3). respectively. Also, series resistance calculation has been performed by using Cheung theory. The device exhibits a strong photovoltaic behavior with a maximum open circuit voltage V-oc of 0.36 V and short-circuit current I-sc of 35.3 nA under 120 lx light intensity only. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：1205 / 1210
页数：6
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