High-sweep-rate 1310 nm MEMS-VCSEL with 150 nm continuous tuning range

被引:77
作者
Jayaraman, V. [1 ]
Cole, G. D. [2 ]
Robertson, M. [1 ]
Uddin, A. [1 ]
Cable, A. [3 ]
机构
[1] Praevium Res Inc, Santa Barbara, CA 93111 USA
[2] Adv Opt Microsystems, Mountain View, CA 94040 USA
[3] Thorlabs, Newton, NJ 07860 USA
关键词
Bandwidth - III-V semiconductors - MEMS - Electromechanical devices - Semiconductor quantum wells - Transceivers - Optical tomography - Gallium arsenide - Mirrors - Wafer bonding;
D O I
10.1049/el.2012.1552
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Microelectromechanical-systems-based vertical-cavity surface-emitting lasers (MEMS-VCSELs) capable of a 150 nm continuous tuning range near 1310 nm are demonstrated. These devices employ a thin optically pumped active region structure with large free-spectral range, which promotes wide and continuous tuning. To achieve VCSEL emission at 1310 nm, a wide-gain-bandwidth indium phosphide-based multiple quantum well active region is combined with a wide-bandwidth fully oxidised GaAs-based mirror through wafer bonding, with tuning enabled by a suspended dielectric top mirror. These devices are capable of being scanned over the entire tuning range at frequencies up to 500 kHz, making them ideal for applications such as swept source optical coherence tomography and high-speed transient spectroscopy.
引用
收藏
页码:867 / 868
页数:2
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