L- and S-band 50-watt power GaAs MESFETs

被引：0
|
作者：
Ishimura, H [1 ]
Murayama, M [1 ]
Arai, K [1 ]
Saito, Y [1 ]
Oda, Y [1 ]
Kuroda, H [1 ]
机构：
[1] TOSHIBA CO LTD,MICROWAVE SOLID STATE DEPT,SAIWAI KU,KAWASAKI,KANAGAWA 210,JAPAN
来源：
1996 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：539 / 542
页数：4
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